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| BC327, BC328 Small Signal Transistors (PNP) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suit-able for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transistors BC337 and BC338 are recommended. max. .022 (0.55) .098 (2.5) C B E On special request, these transistors are also manufactured in the pin configuration TO-18. MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation at Tamb = 25 C Junction Temperature Storage Temperature Range 1) Value 50 30 45 25 5 800 1 100 6251) 150 -65 to +150 Unit V V V V V mA A mA mW C C BC327 BC328 BC327 BC328 -VCES -VCES -VCEO -VCEO -VEBO -IC -ICM -IB Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. 4/98 BC327, BC328 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol DC Current Gain at -VCE = 1 V, -IC = 100 mA Current Gain Group-16 -25 -40 at -VCE = 1 V, -IC = 300 mA Current Gain Group-16 -25 -40 Thermal Resistance Junction to Ambient Air Collector-Emitter Cutoff Current at -VCE = 45 V at -VCE = 25 V at -VCE = 45 V, Tamb = 125 C at -VCE = 25 V, Tamb = 125 C Collector-Emitter Breakdown Voltage at -IC = 10 mA BC327 BC328 BC327 BC328 BC327 BC328 Min. Typ. Max. Unit hFE hFE hFE hFE hFE hFE RthJA -ICES -ICES -ICES -ICES - V(BR)CEO - V(BR)CEO - V(BR)CES - V(BR)CES - V(BR)EBO -VCEsat -VBE fT CCBO 100 160 250 60 100 170 - - - - - 45 25 160 250 400 130 200 320 - 2 2 - - - - 250 400 630 - - - 2001) 100 100 10 10 - - - - - - - - K/W nA nA A A V V Collector-Emitter Breakdown Voltage at -IC = 0.1 mA BC327 BC328 50 30 - - - - V V Emitter-Base Breakdown Voltage at -IE = 0.1 mA Collector Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base-Emitter Voltage at -VCE = 1 V, -IC = 300 mA Gain-Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 50 MHz Collector-Base Capacitance at -VCB = 10 V, f = 1 MHz 1) 5 - - - - - - - 100 12 - 0.7 1.2 - - V V V MHz pF Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. RATINGS AND CHARACTERISTIC CURVES BC327, BC328 RATINGS AND CHARACTERISTIC CURVES BC327, BC328 RATINGS AND CHARACTERISTIC CURVES BC327, BC328 |
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